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Jožef Stefan
International
Postgraduate School

Jamova 39
SI-1000 Ljubljana
Slovenia

Phone: +386 1 477 31 00
Fax: +386 1 477 31 10
Email: info@mps.si

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5/11/2015
We invite you to the 19th Institute colloquium in the academic year 2014/15. The colloquium will be held on Wednesday, May 13, 2015 at 1 PM in the main Institute lecture hall, Jamova 39, Ljubljana.

To read the abstract click  http://www.ijs.si/ijsw/Koledar_prireditev. Past colloquia are posted on  http://videolectures.net/kolokviji_ijs.

Prof. Dr. Alan C. Seabaugh
University of Notre Dame, Notre Dame, Indiana, USA
 
Ion-doped transition metal dichalcogenide transistors
 
Atomically-thin transistors are the subject of growing interest for microelectronic applications. These materials offer superior electrostatic gate control, low interface state density, strain-relaxed heterojunction formation, and flexibility.  For devices these systems need techniques for large area growth, defect control, ohmic contacts, junction doping, gate dielectric nucleation, low oxide thickness gate stacks, and self-alignment processes.  This talk will summarize recent progress in development of transition metal dichalcogenide transistors in nanotube and flake geometries. An approach for doping these devices using solid polymer dielectrics and ions like lithium and cesium will be shown.
 
Cordially invited!